Optical Measurement of Electron Spin Lifetimes in Gallium Arsenide

نویسنده

  • Dallas Carl Smith
چکیده

Optical Measurement of Electron Spin Lifetimes in Gallium Arsenide Dallas Carl Smith Department of Physics and Astronomy Bachelor of Science We measured T1 spin lifetimes for electrons in gallium arsenide at various magnetic field strengths. To perform these measurements, we initialized and probed the spin states using optical techniques. By changing the delay between the initializing (pump) and probe laser pulses, we traced out the spin polarization decay curves. From this data we extracted the T1 spin lifetimes. This technique proved to be effective in measuring lifetimes in magnetic fields between 0 T and 7 T and at temperatures of 1.5 K and 5 K. Lifetimes in our sample were measured up to 800 ns.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Zero-field optical manipulation of magnetic ions in semiconductors.

Controlling and monitoring individual spins is desirable for building spin-based devices, as well as implementing quantum information processing schemes. As with trapped ions in cold gases, magnetic ions trapped on a semiconductor lattice have uniform properties and relatively long spin lifetimes. Furthermore, diluted magnetic moments in semiconductors can be strongly coupled to the surrounding...

متن کامل

Electron spin-phonon interaction symmetries and tunable spin relaxation in silicon and germanium

Compared with direct-gap semiconductors, the valley degeneracy of silicon and germanium opens up new channels for spin relaxation that counteract the spin degeneracy of the inversion-symmetric system. Here the symmetries of the electron-phonon interaction for silicon and germanium are identified and the resulting spin lifetimes are calculated. Room-temperature spin lifetimes of electrons in sil...

متن کامل

2 7 O ct 2 00 6 Charge and spin dynamics in a two dimensional electron gas

Abstract. A number of time resolved optical experiments probing and controlling the spin and charge dynamics of the high mobility two-dimensional electron gas in a GaAs/AlGaAs heterojunction are discussed. These include time resolved reflectivity, luminescence, transient grating, magneto-optical Kerr effect, and electro-optical Kerr effect experiments. The optical experiments provide informatio...

متن کامل

Resonant Spin Amplification in n-Type GaAs

Extended electron spin precession in n-type GaAs bulk semiconductors is directly observed by femtosecond time-resolved Faraday rotation in the Voigt geometry. Synchronous optical pumping of the spin system amplifies and sustains spin motion, exposing a regime where spin lifetimes increase tenfold at low fields and exceed 100 ns at zero field. Precise studies in field and temperature provide clu...

متن کامل

Spin noise spectroscopy in GaAs (110) quantum wells: access to intrinsic spin lifetimes and equilibrium electron dynamics.

In this Letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced effective dimensionality are reported. The nondemolition measurement technique gives access to the otherwise concealed intrinsic, low temperature electron spin relaxation time of n-doped GaAs (110) quantum wells and to the corresponding low temperature anisotropic spin relaxation. The Brownian mot...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2011